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        FWide-Bandgap Compound Semiconductors- Trends and Dynamics
        寬能隙化合物半導體- 市場趨勢與產業動態
        • 2021/12/23
        • 1084
        • 149

        簡報大綱

        Ray Yang, Consulting Director of ITRI/ISTI, was invited to share his recent research at 16th International Microsystems, Packaging, Assembly and Circuits Technology conference (IMPACT 2021), about market trends and industry dynamics of wide-bandgap compound semiconductors, i.e. SiC-based and GaN as well as ultra-wide-bandgap like diamond-based semiconductors. In this presentation, Ray started with Taiwan IC industry updates together with an introduction of two new Taiwan Semiconductor Initiative, one of which is compound semiconductor. Then Ray talked about SiC and GaN devices' growing potential, and industry dynamics based on analysis of patent application activity of major players all over the world. Lastly, Ray concluded what should be paid attention in terms of strategy planning for existing players and new entrants.

        簡報內容

        Wide-Bandgap Compound Semiconductors-Trends and Dynamics
        NO.1
        Taiwan IC Industry Reaches Record-high of NTD3.2 Trillions (US$109B) in 2020
        NO.2
        Taiwan’s High Resilient During Pandemic, Expected Further Record-high of NTD 4T (US$136B) in 2021
        NO.3
        Foundry Contributes the Most, Followed by Fabless IC Design in Taiwan IC Industry
        NO.4
        Attracting foreign partners’ investments to increase their value-add to upgrade Taiwan IC ecosystem
        NO.5
        What’s Next for Taiwan - Angstrom and Compound Semiconductor Initiative
        NO.6
        Taiwan Addressing Opportunities of WBG Semiconductors to go for Green
        NO.7
        SiC MOSFET’s High Power Efficiency & Thermal Performance Match EV & Industrial Needs
        NO.8
        EV、5G Infra、Fast-charging Create High Demand for Power-efficient Semiconductors
        NO.9
        SiC Substrate and Epi House Players
        NO.10
        Japan Takes Lead in SiC Wafer Patents and China Chases Behind
        NO.11
        SiC Devices Patent Application Keeps Momentum while Packaging Draws Attention
        NO.12
        SiC Players View Diamond’s UWBG Property as Candidate for Next-gen Hybrid Power Systems
        NO.13
        GaN Device is one of Key Technologies in Next-gen Microelectronics, by US NSCAI
        NO.14
        GaN Device Plays Important Role in Defense Sector
        NO.15
        US Takes Lead in GaN Patent Application Activity
        NO.16
        GaN Device Packaging Patent Application Growing, same as Packaging of SiCs
        NO.17
        Taiwan RF GaN Program to Build Value-chain with Endeavor of Academia, Industry, and Research Institute
        NO.18
        Conclusion
        NO.19
        thank you
        NO.20

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